The conduction band in a solid is partially filled at 0 k. The solid sample is

In an n-type semiconductor, the Fermi level lies 0.3 e V below the conduction band at 300 k. If the temperature is increased to 330 k, where does the new position of the Fermi level lie?

A p-type semiconductor is obtained by doping silicon with

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap (in e V) for the semiconductor is

The transistor is operated in common emitter configuration at \(\mu A\) to 200 \(\mu A\) produces a change in the collector current from 5 mA to 10 mA. The  current gain is

According to energy band diagram, what makes a substance
(a) conductor 
(b) insulator?

Is Ohm's law obeyed in semiconductor or not?

How does the energy gap of an intrinsic semiconductor vary, when doped with a pentavalent impurity?

Show in a energy band diagram the donor level for an N-type semi conductor.

In transistor a current controlled (or)temperature controlled device?.

The ratio of number of free electrons to holes ne/nh for two different materials A and B are 1 and <1 respectively. Name the type of semi conductor to which A and B belongs.

If a semiconductor has an intrinsic carrier concentration of 1.04 x 10¹⁴ /m³ when doped with 10^28/m³ phosphorous atoms, calculate the concentration of hole /m³ at room temperature.

Draw energy band diagram of n-type semiconductor

Which semiconductor has more mobility : \(p\)-type or \(n\)-type? Explain.

What are input and output characteristics of a transistor? Draw the graphs.

Express by a truth table the output Y for all possible inputs A and B in the circuit shown below 

The diode shown in the figure has a constant voltage drop of 0.5V at all currents and a maximum power rating of 100mW. What should be the value of resistance R connected in series, for maximum current.?

A pure semiconductor germanium or silicon,free of every impurity is called intrinsic semiconductor, At room temperature, a pure semiconductor has a very small number of current carriers (electrons and holes).Hence,its conductivity is low.
When the impurity atoms of valence five or three are doped in a pure semiconductor,we get respectively \(n-\) type or \(p-\) type extrinsic semiconductor.In case of a doped semiconductor.\({ n }_{ e }n_{ h }={ n }_{ i }^{ 2 };\)when \({ n }_{ e }\) and \(n_{ h }\) are the number density of electrons and holes respectively and \({ n }_{ i }\) is the number density of intrinsic charge carriers in a pure semiconductor. The conductivity of extrinsic semiconductor is much higher than that that of intrinsic semiconductor.
Read the above passage and answer the following question:
(i) Name two materials to be doped in pure semiconductor of silicon to get (a) \(p-\)type semiconductor (b) \(n-\)type semiconductor
(ii) What do you learn from the above study?